IRF530NPBF

Power MOSFET, TO-220, 12 A, ± 20 V, Advanced Process Technology, Ultra Low On-Resistance

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Price:: US $0.19~0.40 / piece [Get Latest Price]

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PartNumber:: IRF530NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-12-13

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Part Number:IRF530NPBF
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Product Summary

The IRF530NPBF is a Power MOSFET from International Rectifier. The IRF530NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF530NPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 17A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 12 A; (3)IDM, Pulsed Drain Current: 60A; (4)PD @TC = 25℃, Power Dissipation: 70 W; (5)Linear Derating Factor: 0.47 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 9.0 A; (8)EAR, Repetitive Avalanche Energy: 7.0 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 7.4 V/ns; (10)TJ,TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 1.1Nm.

Features

IRF530NPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.