(China (Mainland))
Product Summary
The MG15Q6ES42 is an N channel IGBT.
Parametrics
MG15Q6ES42 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current:15A; (4)forward current:15A; (5)collector power dissipation:125W; (6)junction temperature:150℃; (7)storage temperature range:-40 to 125℃; (8)isolation voltage:2500V.
Features
MG15Q6ES42 features: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)low saturation voltage:4.0V; (5)high speed:0.5us.
Diagrams
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MG150J7KS50 |
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MG150J7KS61 |
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MG150Q1JS43 |
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Data Sheet |
Negotiable |
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MG150Q1JS44 |
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Data Sheet |
Negotiable |
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