Product Summary

The IRF9530NS is a Power MOSFET. The IRF9530NS utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF9530NS absolute maximum ratings: (1)Pulsed Drain Current: -56; (2)Power Dissipation: 3.8 W; (3)Power Dissipation: 79 W; (4)Linear Derating Factor: 0.53 W/°C; (5)Gate-to-Source Voltage: ± 20 V; (6)Single Pulse Avalanche Energy: 250 mJ; (7)Avalanche Current: -8.4 A; (8)Repetitive Avalanche Energy: 7.9 mJ; (9)Peak Diode Recovery dv/dt: -5.0 V/ns; (10)Operating Junction and Storage Temperature Range:-55 to 175°C.

Features

IRF9530NS features: (1)Advanced Process Technology; (2)Surface Mount; (3)175°C Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.

Diagrams

IRF9530NS pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF9530NS
IRF9530NS

MOSFET P-CH 100V 14A D2PAK
Data Sheet
Negotiable 
IRF9530NSPBF
IRF9530NSPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.21
1-25: $0.78
25-100: $0.57
100-250: $0.56
IRF9530NSTRLPBF
IRF9530NSTRLPBF
International Rectifier
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC
Data Sheet
0-1: $1.54
1-25: $0.99
25-100: $0.71
100-250: $0.67
IRF9530NSTRRPBF
IRF9530NSTRRPBF
International Rectifier
MOSFET
Data Sheet
0-800: $0.44
800-1000: $0.44
1000-2000: $0.41
IRF9530NSTRR
IRF9530NSTRR

MOSFET P-CH 100V 14A D2PAK
Data Sheet
0-800: $0.76
IRF9530NSTRL
IRF9530NSTRL
International Rectifier
MOSFET P-CH 100V 14A D2PAK
Data Sheet
1-800: $0.76